1 tm file number 3197.4 HS-6664RH radiation hardened 8kx8 cmos prom the intersil HS-6664RH is a radiation hardened 64k cmos prom, organized in an 8k word by 8-bit format. the chip is manufactured using a radiati on hardened cmos process, and utilizes synchronous circuit design techniques to achieve high speed performance with very low power dissipation. on-chip address latches are provided, allowing easy interfacing with microprocesso rs that use a multiplexed address/data bus structure. the output enable control ( g ) simplifies system interfacing by allowing output data bus control in addition to the chip enable control ( e ). all bits are manufactured storing a logical ?0? and can be selectively programmed for a logical ?1? at any bit location. applications for the HS-6664RH cmos prom include low power microprocessor based instrumentation and communications systems, remote data acquisition and processing systems, and processor control storage. specifications for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical specifications for these devices are contained in smd 5962-95626. a ?hot-link? is provided on our homepage for downloading. www.intersil.com/spacedefense/space.htm ordering information ordering number internal mkt. number temp. range ( o c) 5962f9562601qxc hs1-6664rh-8 -55 to 125 5962f9562601qyc hs9-6664rh-8 -55 to 125 5962f9562601vxc hs1-6664rh-q -55 to 125 5962f9562601vyc hs9-6664rh-q -55 to 125 hs1-6664rh/proto hs1-6664rh/proto -55 to 125 hs9-6664rh/proto hs9-6664rh/proto -55 to 125 features ? electrically screened to smd # 5962-95626 ? qml qualified per mil-prf-38535 requirements ? 1.2 micron radiation hardened bulk cmos ? total dose . . . . . . . . . . . . . . . . . . . . . . 300 krad(si) (max) ? transient output upset . . . . . . . . . . . . . . >5x10 8 rad(si)/s ? let >100 mev-cm 2 /mg ? fast access time. . . . . . . . . . . . . . . . . . . . . . . 35ns (typ) ? single 5v power supply ? single pulse 10v field programmable ? synchronous operation ? on-chip address latches ? three-state outputs ? nicr fuses ? low standby current . . . . . . . . . . . . . . <500 a (pre-rad) ? low operating current. . . . . . . . . . . . . . . . . . <15ma/mhz ? military temperature range. . . . . . . . . . . -55 o c to 125 o c data sheet august 2000 [ /title (hs- 6664r h) /subjec t (radiat ion harden ed 8k x 8 cmos prom ) /autho r () /keyw ords (intersi l corpor ation, semico nducto r, radiati on harden ed, rh, rad hard, qml, satellit e, smd, class v, caution: these devices are sensitive to electrosta tic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil corporation. | copyright ? intersil corporation 2000
2 pinouts 28 lead ceramic (sbdip) case outline d28.6 mil-std-1835, cdip2-t28 top view nc a12 a7 a6 a5 a4 a3 a2 a1 a0 dq0 dq1 dq2 gnd vdd nc a8 a9 a11 a10 dq7 dq6 dq5 dq4 dq3 p ? g e 28 27 26 25 24 23 22 21 20 19 18 17 16 15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 lead flatpack case outline k28.a mil-std-1835, cdfp3-f28 top view 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 nc a12 a7 a6 a5 a4 a3 a2 a1 a0 dq0 dq1 dq2 gnd vdd nc a8 a9 a11 a10 dq7 dq6 dq5 dq4 dq3 p ? g e ? p must be hardwired at all times to vdd, except during programming. functional diagram 256x256 matrix 32 32 32 32 32 32 32 32 256 gated row decoder latched address register 8 msb a2 a3 a4 a5 a6 a7 a8 lsb gated column decoder programming, and data output control a a 8 ee 8 latched address register e e a 5 a 5 8 1 of 8 a0 a10 a9 a11 a12 msb lsb ? p e g q0 - q7 a1 note: ? p must be hardwired at all times to vdd, except during programming. truth table e g mode 0 0 enabled 0 1 output disabled 1 x disabled HS-6664RH
burn-in circuits hs1-6664rh 28 lead (8kx8 prom dip) hs9-6664rh 28 lead (8kx8 prom flatpack) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 nc a7 a6 a5 a4 a3 a2 a1 a0 dq0 dq1 dq2 vss vdd a8 a9 a11 a10 dq7 dq6 dq5 dq4 dq3 p g e1 a12 nc nc nc nc nc vdd nc nc nc nc nc nc v ss = gnd static configuration notes: power supply: 1. vdd = 5.5v (min) resistors = 10k 10% 2. hs1-6664rh 28 lead (8kx8 prom dip) hs9-6664rh 28 lead (8kx8 prom flatpack) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 nc a7 a6 a5 a4 a3 a2 a1 a0 dq0 dq1 dq2 vss vdd a8 a9 a11 a10 dq7 dq6 dq5 dq4 dq3 p g e1 a12 load load load nc nc vdd nc load load load load load v ss = gnd f9 f10 f12 f0 f11 f0 f6 f5 f4 f3 f2 f1 f13 f8 f7 out vdd/2 10k load: dynamic configuration notes: power supply: vdd = 5.5v (min) 3. vih = vdd to vdd-1.0v 4. vil = 0.0v to 0.8v 5. resistors = 10k 10% 6. f0 = 100khz 10%, 50% duty cycle 7. f1 = f0/2; f2 = f1/2; f3 = f2/2; f4 = f3/2; f5 = f4/2; . . . 8. f13 = f12/2 irradiation circuit hs1-6664rh 28 lead (8kx8 prom dip) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 nc a7 a6 a5 a4 a3 a2 a1 a0 dq0 dq1 dq2 vss vdd a8 a9 a11 a10 dq7 dq6 dq5 dq4 dq3 p g e1 a12 nc nc vdd nc vdd = gnd notes: power supply: 9. vdd = 5.5v 0.5v all resistors = 47k 10% 10. 3 HS-6664RH
4 die characteristics die dimensions: 271milsx307milsx19mils 1mils interface materials: glassivation: type: sio 2 thickness: 8k ? 1k ? top metallization: m1:6k ? 1k ? si/al/cu 2k ? 500 ? tiw m2:10k ? 2k ? si/al/cu assembly related information: substrate potential: v dd additional information: worst case current density: 2x10 5 a/cm 2 transistor count: 110, 874 metallization mask layout HS-6664RH (2) a12 (3) a7 (7) a3 (6) a4 (5) a5 (4) a6 (28) vdd (27) p (26) nc (25) a8 (24) a9 (23) a11 (22) g vss vss vdd a2 (8) a1 (9) a0 (10) dq0 (11) dq1 (12) dq2 (13) gnd (14) dq3 (15) dq4 (16) dq5 (17) dq6 (18) dq7 (19) e (20) a10 (21) vdd HS-6664RH
5 all intersil semiconductor products are m anufactured, assembled and tested under iso9000 quality systems certification. intersil semiconductor products are sold by description only. in tersil corporation reserves the right to make changes in circui t design and/or specifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furn ished by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corpor ation and its products, see web site www.intersil.com sales office headquarters north america intersil corporation p. o. box 883, mail stop 53-204 melbourne, fl 32902 tel: (321) 724-7000 fax: (321) 724-7240 europe intersil sa mercure center 100, rue de la fusee 1130 brussels, belgium tel: (32) 2.724.2111 fax: (32) 2.724.22.05 asia intersil ltd. 8f-2, 96, sec. 1, chien-kuo north, taipei, taiwan 104 republic of china tel: 886-2-2515-8508 fax: 886-2-2515-8369 HS-6664RH
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